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星载大功率GaN固态功放寿命评估方法

Method for life evaluation of spaceborne high power GaN solid state power amplifier

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【作者】 敬小东王海龙游飞魏彦江钟世昌

【Author】 JING Xiaodong;WANG Hailong;YOU Fei;WEI Yanjiang;ZHONG Shichang;Southwest China Research Institute of Electronic Equipment;School of Electronic Science and Engineering,University of Electronic Science and Technology of China;Sichuan Broadband Microwave Circuit High Density Integrated Engineering Research Center;Nanjing Electronic Devices Institute;

【机构】 西南电子设备研究所电子科技大学电子科学与工程学院四川省宽带微波电路高密度集成工程研究中心南京电子器件研究所

【摘要】 近年来大功率氮化镓(GaN)固态功放开始逐步星载应用,但产品可靠性仍未得到充分验证。文章提出利用加速寿命试验(ALT)和在轨工作情况相结合的方法进行大功率GaN固态功放寿命评估。首先利用故障模式、机理及影响分析(FMMEA)确定固态功放的薄弱环节和主要失效机理;然后基于阿仑尼乌斯(Arrhenius)模型研究加速寿命试验激活能和加速应力的取值方法,对产品进行75℃、10 000 h的加速寿命试验;最后综合加速寿命试验结果和在轨工作情况对GaN固态功放进行寿命评估。评估结果显示:该产品45℃条件下在轨工作时,平均无故障时间(MTTF)为1.26×106 h,失效率为7.93×10-7,15年工作可靠度为0.901。

【Abstract】 In recent years, the high-power gallium nitride(GaN) solid-state power amplifiers(SSPA) have gradually been put into aerospace applications, but their reliability is still to be verified. This paper proposes a method for evaluating the lifetime of the high-power GaN SSPA through the accelerated life test(ALT), as well as their on-orbit working performance. First, the weakness and the main failure mechanisms of the GaN SSPA are analyzed, including the failure mode, mechanisms and effects analysis(FMMEA). Then, a method of determining the value of the activation energy and the accelerated stress is discussed, based on the Arrhenius model. At the same time, an ALT of 75 ℃ with a duration of 10 000 h is carried out. Finally, based on the test results and the on-orbit performance, a series of deduced results are obtained under the normal working condition of 45 ℃ which illustrate that the mean time to failure(MTTF) is 1.26×106 h, while the failure rate is 7.93×10-7,and the working reliability of 15 years is 0.901.

【基金】 二代××可靠性专项
  • 【文献出处】 航天器环境工程 ,Spacecraft Environment Engineering , 编辑部邮箱 ,2021年04期
  • 【分类号】V416
  • 【被引频次】1
  • 【下载频次】104
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