【摘要】 本文介绍了一种基于PJFET技术的电压基准源设计方法。该方法利用PJFET夹断电压的温度特性产生负温漂电压,在此基础上叠加一个正温漂电压进行温度补偿,产生低温漂基准电压。根据文中的理论方法,基于1.5 μm 32 V双极工艺设计了一款输出5 V的电压基准源。测试结果表明,该电压基准源温漂在5 ppm/℃以内,具有低噪声,低温漂等特性。更多还原

【Abstract】 This article introduces a voltage reference design method based on PJFET technology.This method uses the temperature characteristics of the PJFET pinch-off voltage to generate a negative temperature drift voltage,then a positive temperature driftvoltageisintroduced to compensaethe negative temperature drift voltage,for generating a low temperature reference voltage.According to thedesign methodin this article,a voltage reference with an output of 5 V is designed，based on the 1.5 μm bipolar process.The test results show that the temperature drift of the voltage reference source is within 5 ppm/℃,and it has the characteristics of low noise and low temperature drift.更多还原