【摘要】 采用直流反应磁控溅射法在Si（111）衬底上制备了ZrN薄膜,通过X射线衍射仪、拉曼光谱仪、场发射扫描电子显微镜、原子力显微镜以及霍尔测量等测试分析手段表征了薄膜的微观结构、表面形貌及电学性能。结果表明,制备的ZrN薄膜为立方相NaCl结构,具有（111）面择优取向。在T_s=550～650℃时,薄膜的结晶性最佳。薄膜呈柱状生长,晶粒尺寸会随着衬底温度的升高先增大后减小,当T_s=550～750℃时,表面出现三角锥状晶粒。制备的ZrN薄膜表面较为平整,表面粗糙度在3.9～6.67 nm之间。测得薄膜的电阻率大小在1.43～24.5×10^-3Ω·cm之间,且电阻率与薄膜的结晶性以及晶粒尺寸相关;薄膜的载流子浓度在0.869～4.38×10²⁰ cm^-3之间,T_s=550～650℃的薄膜电学性能较好。更多还原

【Abstract】 In this work, zirconium nitride（ZrN） thin films are deposited on Si（111） substrates by direct current reactive magnetron sputtering. The microstructure, surface morphology and electrical properties of ZrN thin films are characterized by X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and Hall measurement system. The results show that the ZrN films are cubic, NaCl-type crystal structure with a preferred（111） orientation. The best crystallinity of the films is obtained when Ts is between 550 ℃ and 650 ℃. The growth structure of the films is columnar, and the grain size increases first and the decreases with the increase with substrate temperature. Triangular pyramid-shaped grains are observed on the surface when Ts is between 550 ℃ and 750 ℃. The deposited film is relatively smooth and the RMS roughness is 3.9～6.67 nm. The film resistivity is 1.43～24.5 Ω·cm, which is related with the crystallinity and grain size of the films. The carrier concentration of the film is 0.869～4.38×10²⁰/cm³, and the films with Ts of 550 ℃ to 650 ℃ have better electrical properties.更多还原