【摘要】 阐述GaN高电子迁移率晶体管相对传统硅基器件具有低得多的电容和导通电阻,使得其可以实现比硅基器件更高的开关频率,可以很大程度上提高激光雷达的分辨率,从而实现更安全的驾驶体验。更多还原

【Abstract】 This paper describes that GaN high electron mobility transistor has much lower capacitance and on resistance than traditional silicon-based devices, so it can achieve higher switching frequency than silicon-based devices, and can greatly improve the resolution of lidar, so as to achieve safer driving experience.更多还原