【摘要】 阴极短路MOS栅控晶闸管(Cathodic Short MOS-Controlled Thyristor,CS-MCT)在电容型脉冲功率系统中应用广泛,但面临电流极限的问题,尤其是在大电容高电压条件下,这就需要解决MCT器件并联均流的问题。进行理论和仿真分析栅驱动电阻对并联均流的影响,并采用导通延迟补偿法对器件均流进行改善。测试验证MCT并联可以提高电流极限,并验证导通延迟补偿法可以改善器件均流特性。更多还原

【Abstract】 Cathodic short MOS-controlled thyristor(CS-MCT) has been widely used in the capacitive pulse power systems. However, it has the problem of current limit, especially in the condition of large capacitance and high voltage. Therefore, it is necessary to solve the parallel current sharing problem of MCT devices. The influence of gate drive resistance on parallel current sharing is analyzed by simulation, and the current sharing is improved by gate resistance delay compensation method. Then it is verified that MCT parallel connection can improve the current limit, and it is verified that the gate resistance compensation method can improve the current sharing characteristics.更多还原