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大面积薄层二硫化铌的可控生长
Controllable Growth of Large-scale Niobium Disulfide Thin Films
【摘要】 大面积薄层二维材料的可控制备是材料物理研究领域的热点和难点之一.本工作采用助熔盐辅助的化学气相沉积方法在云母衬底上可控制备了大面积二硫化铌薄层,最大尺寸达到115微米.通过拉曼光谱、电子显微表征技术进一步确认了化学气相沉积法制备出的二硫化铌为3R相,具有很好的单晶性.本工作基于化学气相沉积方法为可控制备二维过渡金属硫化物提供了参考.
【Abstract】 Controllable growth of the large-scale two-dimensional materials is one of the focuses in the material physics. Here, by utilizing the flux-assisted chemical vapor deposition, we successfully realize the controllable growth of the NbS2 thin films on mica substrates. The achieved largest size of the NbS2 thin film is about 115 mm. The as-grown NbS2 thin films are 3 R phase with high-quality single crystalline through the Raman spectrum and electron microscopy characterizations. Our findings will advance the controllable growth of large-scale two-dimensional transition metal dichalcogenides via the chemical vapor deposition.
【Key words】 Niobium disulfide; Chemical vapor deposition; Two-dimensional transition metal dichalcogenides;
- 【文献出处】 低温物理学报 ,Low Temperature Physical Letters , 编辑部邮箱 ,2021年02期
- 【分类号】TQ135.12
- 【下载频次】104