【摘要】 由于碳化硅(SiC)的材料特性,在极端温度下,碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)相对传统硅基器件有突出优势。目前对SiC MOSFET暂态温度特性的研究,主要以单管小电流实验为主,大电流下暂态温度特性的研究还不充分。为分析和验证大电流下暂态温度这一特性,在理论分析的基础上,以CREE 1 200 V/300 A半桥SiC MOSFET模块为研究对象,通过双脉冲测试平台研究SiC MOSFET模块及其驱动电路在不同温度环境下的暂态性能。对比分析了不同温度下开关时间、开关损耗、电应力及电流、电压过冲的差异,实验结果对SiC MOSFET模块在大电流下的选型和驱动设计具有一定的参考意义。更多还原

【Abstract】 Due to the superior material properties of the silicon carbide(SiC),SiC metal-oxide semiconductor field effect transistor(MOSFET)have prominent advantages over silicon based devices at extreme temperatures. At present,the experiment researches on temperature dynamic characteristics of SiC MOSFET are focused on low current level,the researches on dynamic characteristics of the module at high current level are not enough. To test and analyze the characteristics on the high current level,besides necessary theoretical analysis,the double pulse test experiment based on the CREE 1 200 V/300 A half bridge module was carried out. The dynamic characteristics of the SiC MOSFET module and its gate driver were tested at different temperatures. The parameters including switching time,switching losses,electrical stress,overshoot of the current and voltage(di/dt and dv/dt)at different temperatures were compared and analyzed. The results of the research are useful for the selection and driver design of SiC MOSFET module on high current level.更多还原