【摘要】 基于硅转接板工艺实现了超宽带混频微系统组件的三维异构集成,该混频组件由混频多功能芯片和倍频多功能芯片级联而成.基于晶圆级金-金键合工艺实现了四层高阻硅基板堆叠封装.每一层均采用硅通孔(TSV)技术,从而实现信号之间的互连.单片集成微波芯片(MMIC)嵌入在硅腔内,硅基滤波器集成在高阻硅衬底上.硅基转接板上的互连线、腔体以及滤波器采用AutoCAD进行设计,并采用HFSS进行三维电磁场仿真.根据测试结果,混频多功能芯片的射频频率为40～44 GHz,中频频率可覆盖Ku频段,尺寸为10 mm×11 mm×1 mm.倍频多功能芯片工作在16～20 GHz频段,对基波信号的抑制优于50 dB,对二次谐波信号的抑制优于40 dB,尺寸为8 mm×8 mm×1 mm.级联后完全组装的混频组件可实现优于-50 dBc的杂散抑制比和优于15 dB的增益.更多还原

【Abstract】 An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology. Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process. Each layer adopts though silicon via(TSV) technology to realize signal interconnection. A core monolithic integrated microwave chip(MMIC) is embedded in the silicon cavity, and the silicon-based filter is integrated with the high-resistance silicon substrate. The interconnect line, cavity and filter of the silicon-based adapter board are designed with AutoCAD, and HFSS is adopted for 3D electromagnetic field simulation. According to the measured results, the radio frequency(RF) of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF) can cover the Ku band with a chip size of 10 mm×11 mm×1 mm. The multiplier multi-function chip operates at 16-20 GHz. The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm. The cascaded fully assembled mixing component achieves a spur of better than -50 dBc and a gain of better than 15 dB.更多还原