【摘要】 基于电子束曝光基本理论和工艺原理,以涂覆有PMMA抗蚀剂的石英玻璃为研究对象,采用电子束曝光制备微细阵列结构,研究不同工艺参数对曝光微细阵列孔和阵列槽结构的影响。结果表明,在PMMA薄膜厚度250 nm、曝光剂量400 pAs/cm~2、显影时间120 s的条件下,可制备出直径2μm的阵列微孔结构;在PMMA薄膜厚度225 nm、曝光剂量500 pAs/cm~2、显影时间90 s的条件下,可制备出宽度1μm、间距50μm的阵列微槽结构。更多还原

【Abstract】 Based on the basic theory and process principle of electron beam lithography(EBL),the micro array structure of quartz glass coated with PMMA photo resist was prepared by EBL technology.The effects of different process parameters on the structure of micro holes and grooves in array were studied. The results showed that micro holes in array with diameter of 2 nm can be prepared under the conditions of PMMA films at 250 nm thickness,exposure dose at 400 pAs/cm~2 of and development time at 120 s. Meanwhile,the micro grooves in array with 1 μm in width and a spacing of 50 μm can be prepared under the conditions of PMMA films at 225 nm thickness,exposure dose at 500 pAs/cm~2 of and development time at 90 s.更多还原