【摘要】 研究了Zr-Si-N氢终端金刚石（H-diamond）绝缘栅场效应晶体管（MISFET）在有无Al₂O₃保护层情况下的电学特性。分别采用原子层沉积法（ALD）和射频溅射法（RF）制备了Al₂O₃保护层和Zr-Si-N栅介质层。MISFETs的转移特性曲线表明,其栅阈值电压在有无Al₂O₃保护的情况下从-2.5 V变化到3 V,表明器件从常关型转换为常开型。输出和转移特性曲线揭示了氧化铝的存在保护了氢终端,使其免受磁控溅射过程的损伤。更多还原

【Abstract】 The interface properties of Zr-Si-N/hydrogen-terminated diamond（H-diamond） metal insulator semiconductor field transistors（MISFETs） with and without Al₂O₃ protective layer were studied. The Al₂O₃ protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition（ALD） and radio frequency（RF） sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al₂O₃ layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al₂O₃ layer.更多还原