【摘要】 利用金属（Au-Al）作为催化剂,基于固-液-固生长机制,在单晶Si（100）表面生长出高密度、大面积的Si纳米线（Si NWs）。为了提高Si NWs:Eu³⁺的红光发射强度,高温下利用Y³⁺、Eu³⁺共掺杂Si纳米线,制备了荧光纳米材料Si NWs:Eu³⁺,Y³⁺。利用扫描电子显微镜（SEM）、X射线衍射仪（XRD）和荧光光谱仪研究了该材料的物质特性。结果显示,在最佳激发波长为395 nm时,Si NWs:Eu³⁺,Y³⁺荧光纳米材料最强荧光波长为619 nm（⁵D₀→⁷F₂）。同时还出现了576 nm（⁵D₀→⁷F₀）、596 nm（⁵D₀→⁷F₁）、658 nm（⁵D₀→⁷F₃）和708 nm（⁵D₀→⁷F₄）四条谱带。当Y³⁺掺杂摩尔比例为2.5%时,Eu³⁺红光发射强度较未掺杂Y³⁺时提高了约110%。分析认为,Eu³⁺会占据Y³⁺的两个位置:C₂位和S₆位。而C₂位因缺少反演对称性,电偶极输运是允许的,所以对⁵D₀→⁷F₂态跃迁起到了增强的作用。此外,波长为619 nm处的红光发射峰值半高宽由未掺杂Y³⁺时的10.2 nm降低到了7.2 nm,有利于提高样品在荧光检测中的灵敏度和分辨率。更多还原

【Abstract】 The high density and extensive Si nanowires（ Si NWs） are grown from the Si（ 100） surface by using metal（ Au-Al） as catalyst based on the solid-liquid-solid growth mechanism. In order to improve the red emission intensity of Si NWs: Eu³⁺,a series of Y³⁺,Eu³⁺doped Si nanowires are prepared by high temperature method. The characteristic of the obtained fluorescent nanomaterials is studied by X-ray diffraction（ XRD）,scanning electron microscopy（ SEM） and photoluminescence（ PL） spectroscopic techniques. The results show that the Y³⁺,Eu³⁺-doped Si nanowires have a red luminescencence with an emission peak position at 619 nm（⁵D₀→⁷F₂） when the optimize excitation wavelength is 395 nm. There are four emission bands of 576 nm（⁵D₀→⁷F₀）,596 nm（⁵D₀→⁷F₁）,658 nm（⁵D₀→⁷F₃） and 708 nm（⁵D₀→⁷F₄） being observed at the same time. When the ratio of Y³⁺doping is 2. 5 mol%,the emission intensity of Eu³⁺red light is improved about 110% higher than that of undoped results. The analysis suggests that the Eu³⁺will occupy two locations of Y³⁺:C₂ and S₆. However,the electric dipole transport is allowed due to the lack of inversion symmetry,so the transition of⁵D₀→⁷F₂ is enhanced. Furthermore,the full width at half maximum of red emission peak at 619 nm is reduced from 10. 2 nm to 7. 2 nm,which can improve the sensitivity and resolution of the sample in fluorescence detection.更多还原