【摘要】 为了探究电流改变对RGB LED芯片光度学、色度学参数产生的影响以及双高斯模型在不同电流下对RGB LED芯片光学特性的预测准确性。结果表明,随着驱动电流I_F的增加,红光光谱向长波方向移动,绿光和蓝光光谱产生蓝移,RGB LED芯片的半高宽呈线性增加。不同电流下,双高斯模型拟合得到的光谱与实测光谱接近,红色芯片拟合光谱与实测光谱的相关系数最高为0.993257,绿色为0.994372,蓝色为0.992654,色品坐标(x,y)误差均在3%以内。RGB LED混合高、低色温白光,拟合光谱与实测光谱的相关系数在0.984267以上,拟合色坐标与实测色坐标接近。双高斯模型适用于不同电流下RGB LED混合白光设计,具有一定的理论指导和实践依据。更多还原

【Abstract】 This article was to explore the influence of current changes on the photometric and chromaticity parameters of RGB LED chips, and the accuracy of the prediction of optical characteristics of RGB LED chips by the double-gaussian model under different currents. The results showed that with increasing of drive current I_F, the spectrum of red chip moved towards long-wave direction, the spectrum of blue and green chips generated blue-shift, and the FWHM of RGB LED chips increased linearly. The spectrum simulated by double gaussian model was closed to measured spectrum under different currents, which the highest correlation index between simulated and measured spectrum of red reached 0.993257, green was 0.994372 and blue was 0.992654, the error of color coordinates(x, y) were within 3%. Furthermore, the simulation and experimental verification were conducted on RGB LED mixed high and low color temperature white light, respectively. The correlation between simulated and measured spectrum were above 0.984267, and the simulated color coordinate was closed to measured. The results indicated that double gaussian model was applicable to RGB LED mix white light design.更多还原