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Flux-to-voltage characteristic simulation of superconducting nanowire interference device

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【Author】 Xing-Yu Zhang;Yong-Liang Wang;Chao-Lin Lv;Li-Xing You;Hao Li;Zhen Wang;Xiao-Ming Xie;State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS);Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences;CAS Center for Excellence in Superconducting Electronics;

【通讯作者】王永良;尤立星;

【机构】 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS)； Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences； CAS Center for Excellence in Superconducting Electronics；

【摘要】 Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current–voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.更多还原

【Abstract】 Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current–voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.更多还原

【关键词】 superconducting nanowire； switching effect； flux-to-voltage conversion； interference device；
【Key words】 superconducting nanowire； switching effect； flux-to-voltage conversion； interference device；

【基金】 Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000);the National Natural Science Foundation of China (Grant Nos. 61671438 and 61827823);the Science and Technology Commission of Shanghai Municipality,China (Grant No. 18511110200);the Program of Shanghai Academic/Technology Research Leader,China (Grant No. 18XD1404600)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2020年09期

【分类号】TB383.1;TM26
【下载频次】16

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