Growth and physical characterization of high resistivity Fe: β-Ga₂O₃ crystals

【摘要】 High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga₂O₃ single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β-Ga₂O₃ single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga₂O₃ crystal reached to 3.63× 10¹¹?·cm. The high resistivity Fe: β-Ga₂O₃ single crystals could be applied as the substrate for the high-power field effect transistors（FETs）.更多还原

【Abstract】 High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga₂O₃ single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β-Ga₂O₃ single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga₂O₃ crystal reached to 3.63× 10¹¹?·cm. The high resistivity Fe: β-Ga₂O₃ single crystals could be applied as the substrate for the high-power field effect transistors（FETs）.更多还原