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Low-power electro–optic phase modulator based on multilayer graphene/silicon nitride waveguide

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【作者】姬兰婷；陈威；高阳；许言；吴锜；王希斌；衣云骥；李宝华；孙小强；张大明；

【Author】 Lanting Ji;Wei Chen;Yang Gao;Yan Xu;Chi Wu;Xibin Wang;Yunji Yi;Baohua Li;Xiaoqiang Sun;Daming Zhang;State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University;Institute of Marine Science and Technology, Shandong University;

【通讯作者】孙小强;

【机构】 State Key Laboratory of Integrated Optoelectronics ,College of Electronic Science & Engineering, Jilin University； Institute of Marine Science and Technology, Shandong University； State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering ,Jilin University； State Key Laboratory of Integrated Optoelectronics ,College of Electronic Science & Engineering,Jilin University； Institute of Marine Science and Technology ,Shandong University； State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University； State Key Laboratory of Integrated Optoelectronics ,College of Electronic Science & Engineering ,Jilin University；

【摘要】 Electro–optic modulator is a key component for on-chip optical signal processing. An electro–optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation. Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode. The impact of multilayer graphene on the performance of phase modulator is studied comprehensively. Simulation results show that the modulation efficiency improves with the increment of graphene layer number, as well as the modulation length. The 3-d B bandwidth of around 48 GHz is independent of graphene layer number and length. Compared to modulator with twoor four-layer graphene, the six-layer graphene/silicon nitride waveguide modulator can realize π phase shift at a low-power consumption of 14 f J/bit when the modulation length is 240 μm.更多还原

【Abstract】 Electro–optic modulator is a key component for on-chip optical signal processing. An electro–optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation. Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode. The impact of multilayer graphene on the performance of phase modulator is studied comprehensively. Simulation results show that the modulation efficiency improves with the increment of graphene layer number, as well as the modulation length. The 3-d B bandwidth of around 48 GHz is independent of graphene layer number and length. Compared to modulator with twoor four-layer graphene, the six-layer graphene/silicon nitride waveguide modulator can realize π phase shift at a low-power consumption of 14 f J/bit when the modulation length is 240 μm.更多还原

【关键词】 electro–optic modulator； graphene； silicon nitride； waveguide；
【Key words】 electro–optic modulator； graphene； silicon nitride； waveguide；

【基金】 Project supported by the National Key Research and Development Program of China (Grant No. 2019YFB2203001);the National Natural Science Foundation of China (Grant Nos. 61675087,61875069,and 61605057);the Science and Technology Development Plan of Jilin Province,China (Grant No. JJKH20190118KJ)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2020年08期

【分类号】TN761
【下载频次】47

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