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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

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【作者】 阙陶陶赵亚文李柳暗何亮丘秋凌刘振兴张津玮陈佳吴志盛刘扬

【Author】 Tao-Tao Que;Ya-Wen Zhao;Liu-An Li;Liang He;Qiu-Ling Qiu;Zhen-Xing Liu;Jin-Wei Zhang;Jia Chen;Zhi-Sheng Wu;Yang Liu;School of Electronics and Information Technology, Sun Yat-Sen University;School of Materials Science and Engineering, Sun Yat-Sen University;

【通讯作者】 刘扬;

【机构】 School of Electronics and Information Technology, Sun Yat-Sen UniversitySchool of Materials Science and Engineering, Sun Yat-Sen University

【摘要】 The effect of high overdrive voltage on the positive bias temperature instability(PBTI) trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency–conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

【Abstract】 The effect of high overdrive voltage on the positive bias temperature instability(PBTI) trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency–conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.

【基金】 Project supported by the National Key Research and Development Program,China(Grant No.2017YFB0402800);the Key Research and Development Program of Guangdong Province,China(Grant No.2019B010128002);the National Natural Science Foundation of China(Grant No.U1601210);the Natural Science Foundation of Guangdong Province,China(Grant No.2015A030312011)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2020年03期
  • 【分类号】TN386
  • 【下载频次】41
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