节点文献
Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric
【摘要】 The effect of high overdrive voltage on the positive bias temperature instability(PBTI) trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency–conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.
【Abstract】 The effect of high overdrive voltage on the positive bias temperature instability(PBTI) trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT) with LPCVD-SiN_x gate dielectric. A higher overdrive voltage is more effective to accelerate the electrons trapping process, resulting in a unique trapping behavior, i.e., a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence. Combining the degradation of electrical parameters with the frequency–conductance measurements, the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time, new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.
【Key words】 gallium nitride; LPCVD-SiN_x MIS-HEMTs; overdrive voltage; trapping behavior;
- 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2020年03期
- 【分类号】TN386
- 【下载频次】41