节点文献

Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 刘成岳吴斌钱金平李国强侯雅巍韦维陈美霞雷明准郭勇

【Author】 Cheng-Yue Liu;Bin Wu;Jin-Ping Qian;Guo-Qiang Li;Ya-Wei Hou;Wei Wei;Mei-Xia Chen;Ming-Zhun Lei;Yong Guo;Physics Department, School of Electronic Science & Applied Physics, Hefei University of Technology;Institute of Plasma Physics, Chinese Academy of Science;University of Science and Technology of China;

【通讯作者】 郭勇;

【机构】 Physics Department School of Electronic Science & Applied Physics Hefei University of TechnologyInstitute of Plasma Physics Chinese Academy of ScienceUniversity of Science and Technology of China

【摘要】 The plasma current ramp-up is an important process for tokamak discharge,which directly affects the quality of the plasma and the system resources such as volt-second consumption and plasma current profile.The China Fusion Engineering Test Reactor(CFETR) ramp-up discharge is predicted with the tokamak simulation code(TSC).The main plasma parameters,the plasma configuration evolution and coil current evolution are given out.At the same time,the voltsecond consumption during CFETR ramp-up is analyzed for different plasma shaping times and different plasma current ramp rates dIp/dt with/without assisted heating.The results show that the earlier shaping time and the faster plasma current ramp rate with auxiliary heating will enable the volt-second to save 5%-10%.At the same time,the system ability to provide the volt-second is probably 470 V·s.These simulations will give some reference to engineering design for CFETR to some degree.

【Abstract】 The plasma current ramp-up is an important process for tokamak discharge,which directly affects the quality of the plasma and the system resources such as volt-second consumption and plasma current profile.The China Fusion Engineering Test Reactor(CFETR) ramp-up discharge is predicted with the tokamak simulation code(TSC).The main plasma parameters,the plasma configuration evolution and coil current evolution are given out.At the same time,the voltsecond consumption during CFETR ramp-up is analyzed for different plasma shaping times and different plasma current ramp rates dIp/dt with/without assisted heating.The results show that the earlier shaping time and the faster plasma current ramp rate with auxiliary heating will enable the volt-second to save 5%-10%.At the same time,the system ability to provide the volt-second is probably 470 V·s.These simulations will give some reference to engineering design for CFETR to some degree.

【基金】 Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFE0300500 and 2017YFE0300501);the National Natural Science Foundation of China(Grant Nos.11875290 and 11875253);the Fundamental Research Funds for the Central Universities of China(Grant No.WK3420000004)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2020年02期
  • 【分类号】O53
  • 【被引频次】3
  • 【下载频次】23
节点文献中: 

本文链接的文献网络图示:

本文的引文网络