【摘要】 适于高温环境应用的压力传感器的相关研究工作备受关注。以注氧隔离(SIMOX)技术SOI晶圆为基础,探讨了单晶硅高温压阻式压力传感器芯片和封装结构设计,在传感器国家工程中心OEM压力传感器制作工艺的基础上,完成传感器研制与测试。结果表明,在50～300℃温度范围,研制的高温压力传感器具有很好的性能,传感器静态灵敏度大于29 mV/MPa,非线性误差小于0.25%F·S,重复性小于0.2%F·S,传感器灵敏度随温度升高而增大,非线性随温度增加而减小。研制的单晶硅高温压力传感器在军事和民用方面具有广阔的应用前景。更多还原

【Abstract】 The research on pressure sensor which is suitable for application in high temperature environment has attracted much attention.Based on SOI wafer(separation by implanted oxygen,SIMOX technology),the high temperature pressure sensor chip and package structure are investigated.According to the manufacture technology of OEM pressure sensor in national engineering center of sensors,the pressure sensor is developed and measured.The results show that the developed high temperature pressure sensor has good performance from 50 ℃ to 300 ℃,the static sensitivity of the sensor is more than 29 mV/MPa,the nonlinear error is less than 0.25% F·S,and the repeatability is less than 0.2% F·S.The sensitivity of the sensor increases with the increase of temperature,and the nonlinearity decreases with the increase of temperature.The developed monocrystalline silicon high temperature pressure sensor has broad prospects in military and civil fields.更多还原