【摘要】 合成了尺寸均匀、分散性好,且吸收峰在近红外光谱区的硫化铅（PbS）量子点（QDs）,并将其作为红外光吸收源与易于成膜且电学性能优良的有机化合物并五苯（Pentacene）相结合,形成量子点/并五苯复合薄膜作为有源层,采用顶栅底接触型水平场效应晶体管（FET）结构制备了红外光电探测器Au（S,D）/PbS QDs/Pentacene/PMMA/Al（G）。测试了暗态和980 nm波长激光照射下器件的电学参数和探测参数;探究了器件中载流子的传输机制;得到了电学和探测性能优良的PbS量子点/并五苯复合薄膜FET红外光电探测器,在辐照度为0.1mW/cm²的红外激光照射下,器件的响应度达到49.4 mA/W,对应探测率为1.7×10¹¹ Jones。更多还原

【Abstract】 Size uniformed and well solution-dispersed lead sulfide（PbS） Quantum Dots（QDs） were synthesized, which were used as absorbing sources of the infrared illumination due to its absorption peak in the near-infrared spectral region. Pentacene was one of the popular organic compounds, which was easy to form films and had good electrical property. The two semiconductor materials were fabricated into a composite film as the active layer in the top-gate bottom-contact type Field-Effect Transistor（FET）-based infrared photodetectors Au（S,D）/PbS QDs/Pentacene/PMMA/Al（G）. In dark and under 980 nm illumination, the electrical and detecting parameters were measured, and the carriers transmission mechanism of the device was analyzed. A kind of PbS QDs/Pentacene composite film FET-based infrared photodetector with excellent electrical and detecting performances was obtained. Under the irradiation of a 0.1 mW/cm² infrared laser, the responsivity of the device reached 49.4 mA/W, and the corresponding detectivity was 1.7×10¹¹ Jones.更多还原