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Coupling Stacking Orders with Interlayer Magnetism in Bilayer H-VSe2

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【作者】 李奥林周文哲潘江陵夏庆林龙孟秋欧阳方平

【Author】 Aolin Li;Wenzhe Zhou;Jiangling Pan;Qinglin Xia;Mengqiu Long;Fangping Ouyang;State Key Laboratory of Powder Metallurgy, and Powder Metallurgy Research Institute, Central South University;School of Physics and Electronics, and Hunan Key Laboratory for Super-Microstructure and Ultrafast Process,Central South University;School of Physics and Technology, Xinjiang University;

【通讯作者】 欧阳方平;

【机构】 State Key Laboratory of Powder Metallurgy, and Powder Metallurgy Research Institute, Central South UniversitySchool of Physics and Electronics, and Hunan Key Laboratory for Super-Microstructure and Ultrafast Process,Central South UniversitySchool of Physics and Technology, Xinjiang University

【摘要】 Stacking-dependent magnetism in van der Waals materials has caught intense interests.Based on the first principle calculations,we investigate the coupling between stacking orders and interlayer magnetic orders in bilayer H-VSe2.It is found that there are two stable stacking orders in bilayer H-VSe2,named AB-stacking and A’B-stacking.Under standard DFT framework,the A’B-stacking prefers the interlayer AFM order and is semiconductive,whereas the AB-stacking prefers the FM order and is metallic.However,under the DFT+U framework both the stacking orders prefer the interlayer AFM order and are semiconductive.By detailedly analyzing this difference,we find that the interlayer magnetism originates from the competition between antiferromagnetic interlayer super-superexchange and ferromagnetic interlayer double exchange,in which both the interlayer Se-4pz orbitals play a crucial role.In the DFT+U calculations,the double exchange is suppressed due to the opened bandgap,such that the interlayer magnetic orders are decoupled with the stacking orders.Based on this competition mechanism,we propose that a moderate hole doping can significantly enhance the interlayer double exchange,and can be used to switch the interlayer magnetic orders in bilayer VSe2.This method is also applicable to a wide range of semiconductive van der Waals magnets.

【Abstract】 Stacking-dependent magnetism in van der Waals materials has caught intense interests.Based on the first principle calculations,we investigate the coupling between stacking orders and interlayer magnetic orders in bilayer H-VSe2.It is found that there are two stable stacking orders in bilayer H-VSe2,named AB-stacking and A’B-stacking.Under standard DFT framework,the A’B-stacking prefers the interlayer AFM order and is semiconductive,whereas the AB-stacking prefers the FM order and is metallic.However,under the DFT+U framework both the stacking orders prefer the interlayer AFM order and are semiconductive.By detailedly analyzing this difference,we find that the interlayer magnetism originates from the competition between antiferromagnetic interlayer super-superexchange and ferromagnetic interlayer double exchange,in which both the interlayer Se-4pz orbitals play a crucial role.In the DFT+U calculations,the double exchange is suppressed due to the opened bandgap,such that the interlayer magnetic orders are decoupled with the stacking orders.Based on this competition mechanism,we propose that a moderate hole doping can significantly enhance the interlayer double exchange,and can be used to switch the interlayer magnetic orders in bilayer VSe2.This method is also applicable to a wide range of semiconductive van der Waals magnets.

【关键词】 interlayerstackingmagnetismferromagneticmetallicdopingmonolayerordersintenseCurie
【基金】 Supported by the National Natural Science Foundation of China(Grant No.51272291);the Distinguished Young Scholar Foundation of Hunan Province(Grant No.2015JJ1020);the Young Scholar Foundation of Hunan Province(Grant No.2016JJ3142);the Central South University Research Fund for Sheng-Hua Scholars;Central South University State Key Laboratory of Powder Metallurgy;the Fundamental Research Funds for the Central Universities of Central South University
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2020年10期
  • 【分类号】O482.5
  • 【下载频次】34
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