节点文献
Ferromagnetic MnSn Monolayer Epitaxially Grown on Silicon Substrate
【摘要】 Two-dimensional(2D) ferromagnetic materials have been exhibiting promising potential in applications,such as spintronics devices.To grow epitaxial magnetic films on silicon substrate,in the single-layer limit,is practically important but challenging.In this study,we realized the epitaxial growth of Mn Sn monolayer on Si(111) substrate,with an atomically thin Sn/Si(111)-231/2 × 231/2-buffer layer,and controlled the Mn Sn thickness with atomic-layer precision.We discovered the ferromagnetism in Mn Sn monolayer with the Curie temperature(Tc) of ~54 K.As the Mn Sn film is grown to 4 monolayers,Tc increases accordingly to ~235 K.The lattice of the epitaxial Mn Sn monolayer as well as the Sn/Si(111)-231/2 × 231/2 is perfectly compatible with silicon,and thus an sharp interface is formed between Mn Sn,Sn and Si.This system provides a new platform for exploring the 2D ferromagnetism,integrating magnetic monolayers into silicon-based technology,and engineering the spintronics heterostructures.
【Abstract】 Two-dimensional(2D) ferromagnetic materials have been exhibiting promising potential in applications,such as spintronics devices.To grow epitaxial magnetic films on silicon substrate,in the single-layer limit,is practically important but challenging.In this study,we realized the epitaxial growth of Mn Sn monolayer on Si(111) substrate,with an atomically thin Sn/Si(111)-231/2 × 231/2-buffer layer,and controlled the Mn Sn thickness with atomic-layer precision.We discovered the ferromagnetism in Mn Sn monolayer with the Curie temperature(Tc) of ~54 K.As the Mn Sn film is grown to 4 monolayers,Tc increases accordingly to ~235 K.The lattice of the epitaxial Mn Sn monolayer as well as the Sn/Si(111)-231/2 × 231/2 is perfectly compatible with silicon,and thus an sharp interface is formed between Mn Sn,Sn and Si.This system provides a new platform for exploring the 2D ferromagnetism,integrating magnetic monolayers into silicon-based technology,and engineering the spintronics heterostructures.
- 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2020年07期
- 【分类号】TM271
- 【下载频次】24