Band Alignment at the Al₂O₃/β-Ga₂O₃ Interface with CHF₃ Treatment

【摘要】 The energy band alignment at the atomic layer deposited Al₂O₃/β-Ga₂O₃ interface with CHF₃ treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry（SIMS）.With additional CHF₃ plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1 eV to-0.16±0.1 eV.As a result,the energy band alignment changes from type I to type II.This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga–F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.更多还原

【Abstract】 The energy band alignment at the atomic layer deposited Al₂O₃/β-Ga₂O₃ interface with CHF₃ treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry（SIMS）.With additional CHF₃ plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1 eV to-0.16±0.1 eV.As a result,the energy band alignment changes from type I to type II.This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga–F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.更多还原