Comparison of Cavities Formed in Single Crystalline and Polycrystalline α-SiC after H Implantation

【摘要】 Cavities and extended defects formed in single crystalline and polycrystalline α-SiC implanted with H+ions are compared.The samples are investigated by cross-sectional transmission electron microscopy.H₂ bubbles are formed during H implantation and H₂ molecules escape the sample to form cavities during thermal annealing at 1100℃.Microcracks and the extended defects prefer to nucleate in single crystalline α-SiC,but not polycrystalline α-Si C.Grain boundaries can account for the experimental results.The formation of cavities on grain boundaries is investigated.更多还原

【Abstract】 Cavities and extended defects formed in single crystalline and polycrystalline α-SiC implanted with H+ions are compared.The samples are investigated by cross-sectional transmission electron microscopy.H₂ bubbles are formed during H implantation and H₂ molecules escape the sample to form cavities during thermal annealing at 1100℃.Microcracks and the extended defects prefer to nucleate in single crystalline α-SiC,but not polycrystalline α-Si C.Grain boundaries can account for the experimental results.The formation of cavities on grain boundaries is investigated.更多还原