节点文献

Ultrafast Magnetization Precession in Perpendicularly Magnetized L1₀-MnAl Thin Films with Co₂ MnSi Buffer Layers

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【Author】 Si-Wei Mao;Jun Lu;Long Yang;Xue-Zhong Ruan;Hai-Long Wang;Da-Hai Wei;Yong-Bing Xu;Jian-Hua Zhao;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences;Beijing Academy of Quantum Information Science;Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University;

【通讯作者】赵建华;

【机构】 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences； Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences； Beijing Academy of Quantum Information Science； Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University；

【摘要】 Perpendicularly magnetized L1₀-MnAl thin films with Co₂ MnSi bufer layers were prepared on GaAs（001） substrates by molecular-beam epitaxy（MBE）.The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of 1.4×10⁷ erg/cm³.Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect（TRMOKE） measurements,from which the Gilbert damping constant α of epitaxial L1₀-MnAl thin films is evaluated to be less than 0.0175.This work provides an important reference for analyzing the current-induced magnetization switching process in MnAl-based spintronic devices.更多还原

【Abstract】 Perpendicularly magnetized L1₀-MnAl thin films with Co₂ MnSi bufer layers were prepared on GaAs（001） substrates by molecular-beam epitaxy（MBE）.The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of 1.4×10⁷ erg/cm³.Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect（TRMOKE） measurements,from which the Gilbert damping constant α of epitaxial L1₀-MnAl thin films is evaluated to be less than 0.0175.This work provides an important reference for analyzing the current-induced magnetization switching process in MnAl-based spintronic devices.更多还原

【关键词】 magnetization； crystalline； Buffer； perpendicular； anisotropy； template； Gilbert； epitaxy； epitaxial； switching；

【基金】 National Key R&D Program of China (Grant No. 2018YFB0407601);Key Research Project of Frontier Science of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC015 and XDPB12);National Natural Science Foundation of China (Grant Nos. 11834013, 11874349, and 11774339)

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2020年05期

【分类号】O469
【下载频次】18

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献

节点文献

Ultrafast Magnetization Precession in Perpendicularly Magnetized L10-MnAl Thin Films with Co2 MnSi Buffer Layers

本文链接的文献网络图示:

Ultrafast Magnetization Precession in Perpendicularly Magnetized L1₀-MnAl Thin Films with Co₂ MnSi Buffer Layers