【摘要】 采用热蒸发在载玻片和SiO₂衬底上沉积约5. 12 nm的Cu薄膜,再用退火炉分别进行100、200、300、400和500℃等5个温度退火,得到不同温度下的纳米Cu薄膜.用原子力显微镜和紫外-可见分光光度计研究不同退火温度对纳米Cu薄膜表面形貌、粒子分布和光学性质的影响.实验结果表明:当纳米Cu薄膜在载玻片上生长Cu颗粒阵列时,需要将退火温度控制在200℃左右;若使纳米Cu薄膜在SiO₂薄膜表面也能生长Cu颗粒阵列,退火温度比没有沉积SiO₂薄膜的衬底高100℃,此时纳米Cu颗粒对应方均根粗糙度为7. 20 nm、峰高（Skewness）为1. 75,以及偏态（Kurtosis）为5. 67,仅透射率略低9%.这样的Cu颗粒阵列更利于做超结构薄膜与完美吸收的顶层纳米金属颗粒.当退火温度为500℃时,载玻片上生长Cu薄膜的透射率出现一个相对稳定的波段,该工艺条件制备出来的纳米Cu薄膜,可以用来制作一些微型芯片,而SiO₂薄膜表面生长使纳米Cu薄膜对应方均根粗糙度为6. 25 nm、峰高为0. 57,以及偏态为2. 66.这样的Cu颗粒阵列不仅能够做大频率光电波吸收,还可以用作全固态电池中电解质上层的导电层.更多还原

【Abstract】 In this paper,the fixed thickness 5. 12 nm of all the Cu thin films were fabricated on glass slides and SiO₂ substrates by using thermal evaporation method,then annealed at 100,200,300,400 and 500 ℃,respectively. The effect of the annealing temperature on the surface morphology,conductivity and crystal structure of Cu thin films was successively investigated by AFM（ atomic force microscopy） and UV-Vis spectrophotometry. The experimental results indicate that the annealing temperature needs to be controlled to about 200 ℃ when the NPA（ nanoscale particle array） of Cu thin films are grown on the slide glass. If the NPA of Cu thin films can also be grown on the surface of the SiO₂ film,the annealing temperature is 100 ℃ higher than the sample that the sample substrate without SiO₂ film deposited. At this time,the NCP（ nano copper particles） have a RMS（ root mean square） surface roughness of 7. 20 nm,a Skewness of 1. 75 and a Kurtosis of 5. 67. The transmittance alone is slightly lower by 9%. Such a NPA is more conducive to superstructure thin films and perfectly absorbing top layer NMP（ nano metal particles）. The transmittance of the Cu film grown on the slide glass appears a relatively stable wavelength band,when the annealing temperature is 500 ℃ . The NCF（ nano copper film） prepared by the process conditions can be used to make some microchips. The surface growth of SiO₂ film made the NCF with a RMS of 6. 25 nm,a Skewness of 0. 57,and a Kurtosis of 2. 66. Such a NPA can not only absorb light waves at large frequencies,but also can be used as electrolyte upper layers in all-solid-state batteries of the conductive layer.更多还原