节点文献
拓扑半金属α2-Ti3Al(0001)表面的电子结构理论研究
Theoretical Investigation of the Electronic Structure of the Topological Semimetal α2-Ti3Al (0001) Surface
【摘要】 采用基于密度泛函理论的第一性原理方法对α2-Ti3Al(0001)表面的电子结构进行计算。结果表明:(1)α2-Ti3Al(0001)表面的表面能为2.03 J/m2,表面功函数为4.265 eV;(2)表面的总态密度在费米能级处达到极大值,系统呈现金属性,与块体的半金属差异明显,Ti-s、Ti-p和Al-s轨道受层数的影响较小,而Ti-d和Al-p轨道受层数的影响较大,均在费米能级处出现极大值;(3)能带结构未呈现块体的节线环,而是在费米能级附近以下的Γ点,出现一个类电子型的三带交叉点,在费米能级以上的Γ点,出现一个类空穴型的两带交叉点。
【Abstract】 The electronic structure of α2-Ti3Al(0001) surface was calculated by the first principle based on density functional theory. The results show that:(1)the surface energy of the α2-Ti3Al(0001) surface is 2.03 J/m2, and the surface work function is 4.265 eV;(2)the total density of states on the surface reaches a maximum value at the Fermi level, and the system exhibits a metallic property, which is significantly different from the semimetal of the α2-Ti3Al bulk, Ti-s, Ti-p and Al-s orbitals are less affected by the number of layers, while Ti-d and Al-p orbitals are more affected by the number of layers, and all of them have maximum values at the Fermi level;(3)the nodal line ring is not present in the band structure of the surface, but there is a three electronlike bands crossing point at Γ point under the Fermi level, and there is a two holelike bands crossing point at Γ point above the Fermi level.
【Key words】 topological semimetal; α2-Ti3Al(0001); electronic structure; first principle; band structure; density of state;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2020年08期
- 【分类号】O469
- 【下载频次】121