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Co-doping method used to improve the charge transport balance in solution processed OLEDs

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【作者】 胡俊涛王鹏肖学胡晟许凯王向华

【Author】 HU Jun-tao;WANG Peng;XIAO Xue;HU Sheng;XU Kai;WANG Xiang-hua;National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology;School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology;

【通讯作者】 胡俊涛;

【机构】 National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of TechnologySchool of Instrument Science and Opto-electronics Engineering, Hefei University of Technology

【摘要】 In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes(OLEDs). By changing the ratio of two thermally activated delayed fluorescent(TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide(ITO, 150 nm)/PEDOT:PSS(30 nm)/CBP:4 Cz IPN-x%:4 Cz PN-y%(30 nm)/TPBi(40 nm)/Li F(1 nm)/Al(100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4 Cz IPN:2% 4 Cz PN and 2% 4 Cz IPN:6% 4 Cz PN in emitting material layer(EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.

【Abstract】 In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes(OLEDs). By changing the ratio of two thermally activated delayed fluorescent(TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide(ITO, 150 nm)/PEDOT:PSS(30 nm)/CBP:4 Cz IPN-x%:4 Cz PN-y%(30 nm)/TPBi(40 nm)/Li F(1 nm)/Al(100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4 Cz IPN:2% 4 Cz PN and 2% 4 Cz IPN:6% 4 Cz PN in emitting material layer(EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.

【关键词】 dopingprocessedindiumPEDOTthermallydopantevaporationassistfabricatecoated
【基金】 supported by the National High Technology Research and Development Program of China (No.2012AA011901);the National Program on Key Basic Research Project of China (No.2012CB723406);the National Natural Science Foundation of China (No.51573036);the Fundamental Research Funds for the Central Universities of China (No.JD2016JGPY0007);the Industry-University-Research Cooperation Project of Aviation Industry Corporation of China (No.CXY2013HFGD20)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2020年06期
  • 【分类号】TN383.1
  • 【下载频次】24
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