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Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current

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【作者】 贾凯萍张亮冯列峰

【Author】 JIA Kai-ping;ZHANG Liang;FENG Lie-feng;Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, Tianjin University;

【通讯作者】 冯列峰;

【机构】 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, Tianjin University

【摘要】 Using the rate equation, several optical methods of characterizing the threshold of a laser diode(LD) were analyzed. The thresholds determined by all methods are consistent if the spontaneous-emission-coefficient(β) is small. If β>0.05, the thresholds obtained by different methods are different. Especially, for micro-nano LDs with a large β, these methods are starting to become inaccurate. However, the d2S/dI2-I is a relatively accurate method to characterize threshold of these LDs compared to other methods. The effects of the spontaneous-emission-lifetime(τsp) and the photon-lifetime(τp) on thresholds were analyzed. The exact functions between the threshold and the β, τsp and τp were obtained.

【Abstract】 Using the rate equation, several optical methods of characterizing the threshold of a laser diode(LD) were analyzed. The thresholds determined by all methods are consistent if the spontaneous-emission-coefficient(β) is small. If β>0.05, the thresholds obtained by different methods are different. Especially, for micro-nano LDs with a large β, these methods are starting to become inaccurate. However, the d2S/dI2-I is a relatively accurate method to characterize threshold of these LDs compared to other methods. The effects of the spontaneous-emission-lifetime(τsp) and the photon-lifetime(τp) on thresholds were analyzed. The exact functions between the threshold and the β, τsp and τp were obtained.

【基金】 supported by the National Natural Science Foundation of China(Nos.61804010,61874004 and 11204209);the Natural Science Foundations of Tianjin City(No.17JCYBJC16200)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2020年02期
  • 【分类号】TN248.4
  • 【下载频次】13
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