【摘要】 实现以光作为输入来控制器件行为的光驱动器件是现代光电互联电路研究的重点之一.本文基于二维材料体系,创新性地利用光栅极代替普通场效应晶体管中的栅极,利用光代替栅极电压作为输入,用以驱动器件从电阻状态转变为p-n二极管状态.在所制备的黑磷半光栅晶体管中,当无光照引入时,器件在电阻状态下工作,不具有整流;当引入光照后,由于半光栅极所产生的光生栅压效应,沟道层被定义于p-n二极管状态,表现出明显的整流行为和光伏特性.当撤掉光时,沟道层由二极管状态恢复至电阻状态,也进一步说明p-n结的形成依赖于光照的引入.也就是说,半光栅晶体管既可以利用光来形成p-n结,同时又可以把光转换为电,体现出"一体式"特点.该光控p-n结将会在新一代光电互联电路中找到一些新奇的应用.更多还原

【Abstract】 The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits. In this work, it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction channels. The results indicate that the dominant charge carrier type and density in black phosphorus（BP） conduction channel can be effectively modulated by the underlying cadmium sulfide（CdS） photogate layer under light illumination. This enables flexible switching of the working state between BP resistor and BP p-n diode in the designed semi-photo-gate transistor（SPGT） devices when switching the light on and off（ultra-low threshold light power）. Simultaneously, the achieved BP p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic properties. That is to say, light can be employed as external stimulus to define the BP p-n junctions, and in turn the p-n junctions will further convert the light into electrical power, showing all-in-one opto-electrical interconnection properties. Moreover, the SPGT device architecture is also applicable for construction of other ambipolar semiconductor-based（WSe₂-and MoTe₂-based） p-n diodes. Such universal all-in-one light-triggered lateral homogeneous pn junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications.更多还原