【摘要】 SiC材料具有较大的禁带宽度、高临界电场、高载流子饱和漂移速度和高热导率等优良特性,能广泛应用在高温、高压、大功率等领域。为探究温度对4H-SiC MOSFET静态特性的影响规律,以指导高温高压环境下4H-SiC MOSFET的设计与制造,文章基于Silvaco平台对高压4H-SiC MOSFET器件进行了仿真建模,获得了其不同温度下的击穿电压、转移特性和输出特性,探究了温度对其击穿电压、阈值电压、饱和漏电流、导通电阻的影响规律。文章最终得到了300 K时击穿电压为4 450 V的SiC MOSFET器件元胞结构模型,验证了其静态特性及参数受温度影响较明显,该影响规律符合SiC MOSFET的静态特性理论。更多还原

【Abstract】 SiC?materials?have?excellent?properties?such?as?large?forbidden?band?width,?high?critical?electric?field,?high?carrier?saturation?drift?speed?and?high?thermal?conductivity,?making?them?widely?used?in?high?temperature,?high?voltage,?high?power?and?other?fields.?In?order?to?investigate?the?influence?of?temperature?on?the?static?characteristics?of? 4H-SiC?MOSFET?to?guide?the?design?and?manufacture?of? 4H-SiC?MOSFET in high temperature and high voltage environment, a high-voltage 4H-SiC MOSFET device was simulated and modeled based on the Silvaco platform, and the breakdown voltage, transfer characteristics and output characteristics at different temperatures were obtained. The influence?of?temperature?on?its?breakdown?voltage,?threshold?voltage,?saturated?current?and?on-resistance?was?investigated.?The?cell?structure?model?of?SiC?MOSFET?device?with?a?breakdown?voltage?of ?4?450?V?at? 300?K?was?obtained.?It?was?verified?that?the?static?characteristics?and?parameters?were?affected?by?temperature.?The?influence?law?was?consistent?with?the?static?characteristic?theory?of?SiC?MOSFET.更多还原