【摘要】 为改善传统AlGaN/GaN HEMT器件的漏电大、击穿电压低、电流崩塌明显的问题,并进一步提升器件效率、增益等性能,在传统AlGaN/GaN HEMT器件的外延层表面分别生长了2 nm i-GaN和2 nm n-GaN/2 nm iGaN,得到非掺杂帽层结构和掺杂帽层结构。针对这两种帽层结构,研究对器件直流特性、微波特性及可靠性的影响,并与传统结构器件性能进行对比。非掺杂帽层器件的饱和电流、漏电水平、输出功率、功率附加效率以及高温、高电场、高电流稳定性均优于传统器件,但跨导与传统器件相当,微波压缩特性不足。而掺杂帽层器件漏电水平最好,但直流和微波性能不佳。更多还原

【Abstract】 To solve the problems of large leakage current,low breakdown voltage and obvious current collapse of conventional AlGaN/GaN HEMTs,and to improve device efficiency and gain,the non-doped cap layer structure and doped cap layer structure were built in this paper,which were deposited with 2 nm i-GaN and 2 nm n-GaN/2 nm i-GaN on the conventional AlGaN/GaN HEMT epitaxial layers separately. The performances of DC characteristics,microwave characteristics and reliabilities were studied about the non-doped and doped cap layer HEMTs,and the performances were compared with those of conventional HEMTs.The non-doped cap layer HEMT has greater electronic properties than conventional HEMT in saturation current,leakage current,output power,power-added efficiency(PAE),and reliabilities in high temperature,high electric field,and high current density conditions,but the transconductance of non-doped cap layer HEMT is almost equal to that of conventional HEMTs,the microwave compression is insufficient. Although the doped cap layer HEMT has greatest leakage level,but the other DC and microwave properties are unsatisfied.更多还原