【摘要】 采用GaAs增强型pHEMT工艺,将限幅器和低噪声放大器集成在同一衬底,设计了一款用于5～6 GHz的限幅低噪声放大器。限幅器采用PIN二极管进行设计,低噪声放大器采用并联负反馈、源级电感负反馈以及电流复用结构,减小功耗的同时改善了增益平坦度和稳定性。测试结果表明,在工作频带内,限幅低噪声放大器的增益为27±0.2 dB,噪声系数为1.1～1.3 dB,总功耗为240 mW,耐功率大于46 dBm(2 ms脉宽,30%占空比),芯片尺寸为3.3 mm×1.3 mm。更多还原

【Abstract】 A 5～6 GHz limiter low noise amplifier based on GaAs enhanced pHEMT technology was designed. The limiter and low noise amplifier were integrated on the same substrate. PIN diode was used in limiter design. Shunt negative feedback,source degeneration and current reuse topology were used in low noise amplifier. Low power consumption,stability together with gain flatness were obtained. The measurement results show that during working frequency,the proposed limiter low noise amplifier has achieved gain of 27±0.2 dB and noise figure of 1.1～1.3 dB. The total power consumption is 240 mW. The limiter low noise amplifier can withstand 46 dBm pulse power(2 ms pulse width,30% duty cycle). The size of chip is 3.3 mm × 1.3 mm.更多还原