【摘要】 以CoFeMnSi作为研究对象,对其进行图形化设计,以研究图形化CoFeMnSi薄膜的磁学特性。利用感光溶胶-凝胶法和激光干涉法制得条纹图形ZrO₂薄膜,之后利用磁控溅射法在其表面溅射沉积CoFeMnSi,以达到制得图形化CoFeMnSi磁性薄膜的目的,并对其表面形貌和磁学特性进行了表征。采用金相显微镜分析验证CoFeMnSi薄膜继承了ZrO₂的条纹图形结构,条纹图形周期约为2μm;面内磁性测量显示薄膜398 kA/m磁场下的磁化强度与外磁场和条纹夹角θ呈180°周期性变化关系,且磁化强度介于390～440kA/m;利用CoFeMnSi平膜面内磁化强度及面外磁化强度与外加磁场方向的变化关系,解释了条形薄膜磁化强度的θ角度依赖关系;采用磁力显微镜观察到磁畴结构形态为蜂窝状,磁畴尺寸大约1～2μm。更多还原

【Abstract】 CoFeMnSi was taken as the research object, with its pattern design carried out to study the magnetic characteristics of the patterned CoFeMnSi film. The ZrO₂ film with fringe pattern was prepared by the photosensitive sol-gel method and the laser interference method, and CoFeMnSi was sputtered on its surface by magnetron sputtering method to achieve the purpose of producing patterned CoFeMnSi magnetic films. Its surface morphology and magnetic properties were characterized. Metallography microscopy was used to verify that CoFeMnSi film was inherited ZrO₂ fringe pattern structure with the fringe pattern period of about 2 μm. In-plane magnetic measurements showed that the magnetization of the thin film in the398 kA/m magnetic field was in a relationship of 180° with the angle between the external magnetic field and the fringe with the magnetization range of 390-440 kA/m. CoFeMnSi flat film was used to conduct a controlled experiment to quantitatively explain the angle dependence of magnetization of the patterned film. The magnetic domain structure was observed by magnetic microscope as honeycombs the size of about 1-2 μm.更多还原