【摘要】 光子增强热电子发射（PETE）全固态太阳能电池是PETE研究的一个重要方向。本文选择P型重掺杂的窄带隙In_xGa_1-xN材料作为吸收层,N型掺杂的宽带隙的In_xGa_1-xN材料作为势垒层组成全固态太阳能电池,运用AMPS-1D软件研究In组分和势垒层掺杂浓度对InGaN全固态太阳能电池性能的影响,结果得到了InGaN重掺杂浓度的临界值为3.94×10¹⁹/cm³,发现全固态太阳能电池的光电转换效率会随着势垒层In组分的变化而变化,并由此得出最优的组合为:吸收层In组分为0.75,势垒层In组分为0.58,光电转换效率为31.333%。进一步研究该组合发现光电转换效率会随着势垒层掺杂浓度的升高而降低,最优的势垒层掺杂浓度不易超过2×10¹⁹/cm³,调节势垒层In组分可以起到调节势垒高度的作用,本文的结果将为InGaN全固态太阳能电池的制备提供理论支持。更多还原

【Abstract】 Photon enhanced thermionic emission（PETE）all-solid-state solar cells is an important direction of PETE research.The P-type heavily doped narrow band gap In_xGa_1-xN material was selected as the absorption layer,and the N-type doped wide-band gap In_xGa_1-xN material was selected as the barrier layer to form all-solid-state solar cell.AMPS-1 D software was used to study the influence of In component and barrier doping concentration on the performance of InGaN all-solid-state solar cells.The critical value of InGaN heavy doping concentration is 3.94×10¹⁹/cm³ obtained by the software,and the photoelectric conversion efficiency of the all-solid-state solar cells would change with the increase of the In component of the barrier layer and thus to get the optimal combination of absorbing layer In component is 0.75,barrier layer In component is 0.58,the conversion efficiency is 31.333%.Further study of the combination shows that the conversion efficiency decreases with the increase of the doping concentration of the barrier layer,and the optimal doping concentration of the barrier layer is difficult to exceed 2×10⁹/cm³.Adjusting the In component of the barrier layer can set the height of the barrier.The results of the paper provide theoretical support for the preparation of PETE all-solid-state solar cell of InGaN.更多还原