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后摩尔时代的技术创新

Technological Innovation in the Post-Moore Law Period

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【作者】 许居衍黄安君

【Author】 XU Juyan;HUANG Anjun;China Electronic Technology Group Corporation No.58 Research Institute;Huahong Semiconductor (Wuxi) Co.,LTD.;

【通讯作者】 黄安君;

【机构】 中国电子科技集团公司第五十八研究所华虹半导体(无锡)有限公司

【摘要】 从半导体技术与架构分类的角度出发,从科技范式的高度揭示了后摩尔时代百花斗艳的创新图象。基于硅CMOS技术和冯·诺依曼计算架构所形成的"硅-冯"范式,仍将长期主导电子信息产业的发展,但创新主体已从技术转向架构。与此同时,在冯氏架构下,探索类同硅CMOS的器件技术创新("类硅"模式)和采用硅CMOS技术模拟脑神经的非冯架构创新("类脑"模式)也在应用推动下得到快速发展。现行架构下的新兴技术创新和现行技术下的新兴架构创新终将迎来技术与架构全新的颠覆性创新("新兴"范式),从而再一次回归到物理基础创新。

【Abstract】 From the perspective of semiconductor technology and architecture classification, the article reveals the blossoming innovation landscape in the post-Moore Law Period from the height of the technology paradigm.The discussion points out that the "silicon-Von" paradigm based on silicon CMOS technology and Von Neumann computing architecture will continue to dominate the development of the electronic information industry for a long time, but the main body of innovation has shifted from technology to architecture. At the same time, device innovations exploring silicon-like CMOS technology( "silicon-like" paradigm) and non-Von architectures using silicon-based CMOS technology to simulate the brain( "brain-like" paradigm) are also rapidly gaining momentum driven by applications in the Von architectures. Emerging innovations in current architectures and emerging architectural innovations in current technologies will eventually usher in new and disruptive innovations in technology and architecture( "emerging" paradigm) that will once again return to the physical foundations of innovation.

  • 【文献出处】 电子与封装 ,Electronics & Packaging , 编辑部邮箱 ,2020年12期
  • 【分类号】F416.63;TN30
  • 【被引频次】19
  • 【下载频次】971
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