【摘要】 采用溶剂热法制备掺铝的铜铟镓硒Cu（InGaAl）Se₂（CIGAS）纳米粉末,并直接将此纳米粉末作为蒸镀材料制备铜铟镓铝硒（CIGAS）薄膜,再将其放置在装有高纯硒粉的自制密封法兰内在真空下进行硒化和退火处理,从而得到符合化学计量比的CIGAS薄膜。利用X射线衍射（XRD）和拉曼光谱（Raman）对样品结构和成分进行测量,确认CIGAS薄膜样品是黄铜矿结构和铜铟镓铝硒成分。使用椭圆偏振光谱测量技术对CIGAS薄膜进行椭偏光谱测量,进而得出薄膜光学参数如折射率n（λ）、消光系数k（λ）、吸收系数a（l）以及薄膜光能隙E_g,并发现Al元素的掺杂明显增加了薄膜光能隙,并进行了相关物理分析。更多还原

【Abstract】 The copper indium gallium aluminum selenium Cu（InGaAl）Se₂（CIGAS） nanometer powders were prepared by the solvent thermal method, and the copper indium gallium aluminum selenium（CIGAS） film was prepared by directly using the nanometer powders as the evaporation materials. And then the amorphous film was placed in a sealing flange with high purity selenium powder to selenide and anneal under vacuum, and CIGAS film conformed to the stoichiometric ratio was obtained. The structure and composition of CIGAS thin films were determined by X-ray diffraction（XRD） and Raman spectroscopy. The elliptic parameters Ψ（λ） and Δ（λ） of the CIGAS film were measured using elliptic polarization spectral measurement technique, and then the thin film optical parameters such as refractive index n（λ）, extinction coefficient k（λ）, absorption coefficient α（λ） and the light energy gap E_g were obtained. It is found that the doping of Al significantly increases the light energy gap E_g, and the related physical questions were also analyzed.更多还原