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真空电弧熔炼制备U3Si2块体及其杂质状态研究
Major Surface Impurities of Vacuum Arc Melted U3Si2 Bulk Material:An Experimental Study
【摘要】 U3Si2作为核燃料,相比于传统的UO2燃料,具有高的铀密度和良好的导热性等优点,是极具潜力的下一代核燃料候选。U3Si2多采用电弧熔炼的方法制备,但目前对U3Si2材料的表面杂质状态的研究仍有待深入开展。本文通过真空四电弧熔炼方法制得了U3Si2样品。通过X射线衍射仪分析了样品结构与取向特性。能量色散谱仪以及X射线光电子能谱分析表明,电弧熔炼得到的U3Si2样品主要含有C、O杂质,其中C杂质属于表面附着,而O杂质来源于表面氧化,以及熔炼过程中引入的少量O杂质。
【Abstract】 The U3Si2 bulk material,an advanced nuclear fuel with good thermal conductivity and high uranium density,was prepared by tetra-arc melting in vacuum.The microstructures and depth profile of main impurities were characterized with X-ray diffraction spectroscopy,energy dispersive spectroscopy and X-ray photoelectron spectroscopy.The results show that the main uniformly distributed impurities were carbon and oxygen.To be specific,a decreasing carbon depth profile possibly originated from oxidation of hydrocarbon in residue gas and carbon surface segregation; and the oxygen depth distribution probably resulted from surface oxidation in argon ion sputtering and oxygen doping or weak oxidation in arc melting of liquid U3Si2.
- 【文献出处】 真空科学与技术学报 ,Chinese Journal of Vacuum Science and Technology , 编辑部邮箱 ,2019年05期
- 【分类号】TL28
- 【被引频次】2
- 【下载频次】181