Review of deep ultraviolet photodetector based on gallium oxide

【摘要】 Ultraviolet（UV） photodetectors（PDs） have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga₂O₃ is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga₂O₃ is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga₂O₃ to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga₂O₃ photodetectors based on single crystal or amorphous Ga₂O₃ are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga₂O₃ photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga₂O₃ and amorphous Ga₂O₃ thin film are analyzed and compared. Finally, the prospects of Ga₂O₃ UV photodetectors are forecast.更多还原

【Abstract】 Ultraviolet（UV） photodetectors（PDs） have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga₂O₃ is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga₂O₃ is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga₂O₃ to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga₂O₃ photodetectors based on single crystal or amorphous Ga₂O₃ are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga₂O₃ photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga₂O₃ and amorphous Ga₂O₃ thin film are analyzed and compared. Finally, the prospects of Ga₂O₃ UV photodetectors are forecast.更多还原