【摘要】 针对不同基区表面掺杂浓度的NPN型晶体管,采用⁶⁰Coγ射线辐射源开展辐照实验,根据测得的电学参数及深能级瞬态谱,分析了NPN型晶体管的损伤效应机制。研究结果表明,在相同吸收剂量下,基区表面掺杂浓度高的NPN型晶体管比掺杂浓度低的NPN型晶体管对电离辐射更为敏感,其基极电流增幅更大;随着吸收剂量的增加, NPN型晶体管的电流增益退化程度加剧;在基区表面掺杂浓度高的NPN晶体管中,电离辐射诱导的氧化物电荷和界面态能级位置均更接近于禁带中央,导致复合率增大,从而使晶体管的电学性能退化程度加剧。更多还原

【Abstract】 In this paper, NPN bipolar junction transistors with different base surface doping concentrations are irradiated by using ⁶⁰Co γ ray with irradiation dose rate of 100 rad（Si）·s^-1. The damage mechanism of the NPN transistors is analyzed according to the measured electrical parameters and deep level transient spectrum（DLTS）. The results show that the NPN transistors with high base surface doping concentration are more sensitive to ionizing radiation than those with low base surface doping concentration under the same absorbed dose. With the increase of the absorbed dose, the degradation of current gain of the NPN transistors is more serious. In the NPN transistors with high base surface doping concentration, oxides induced by ionizing radiation are more sensitive than the NPN transistors with low base surface doping concentration, the DLTS energy levels are closer to the center of the forbidden band, which leads to the increase of recombination rate and the degradation of the transistor’s electrical performance.更多还原