【摘要】 采用Er镶嵌靶,以射频（RF）反应磁控溅射法,在蓝宝石衬底上制备出了c轴取向的Er_0.11Al_0.89N_z压电薄膜。运用正交设计实验优化后,Er_0.11Al_0.89N_z薄膜的膜厚、表面粗糙度分别为1.20μm和1.0 nm,光学介电常数从4.19增大到4.29。Er_0.11Al_0.89N_z/蓝宝石基声表面波（SAW）谐振器的中心频率和品质因数Q值相较于纯AlN降低,有效机电耦合系数比AlN_z/蓝宝石基SAW谐振器提高了20%,达到1.80%。研究结果表明,Er掺杂AlN后晶格常数比值c/a基本保持不变,但晶体中离子键成分的上升使晶体结构软化,从而导致器件频率下降,有效机电耦合系数增加。更多还原

【Abstract】 The c-axis oriented Er_0.11Al_0.89N_z films were prepared on sapphire substrates from a single target with Er metal ingots by RF reactive magnetron sputtering. After optimizing by the orthogonal design experiment, the thickness and surface rough ness of Er_0.11Al_0.89N_z film are 1.20 μm and 1.0 nm, respectively, and the optical permittivity of doping film increases from 4.19 to 4.29.The Er_0.11Al_0.89N_z/sapphire based SAW resonators has lower center frequency and Q value compared with the pure AlN, but the electromechanical coupling coefficient is up to 1.8%, 20% higher than that of AlN_z/sapphire based SAW resonators. The crystal structure of thin film shows that the lattice constant ratio of c/a remains unchanged after Er doping AlN. However, the Er dopant will introduce ionic bonds to AlN, which soften the crystal structure, leads to a large electro-mechanical coupling coefficient.更多还原