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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

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【作者】薛小帝；刘雨；朱来攀；黄威；张洋；曾晓琳；吴静；徐波；王占国；陈涌海；张伟风；

【Author】 Xiao-di Xue;Yu Liu;Lai-pan Zhu;Wei Huang;Yang Zhang;Xiao-lin Zeng;Jing Wu;Bo Xu;Zhan-guo Wang;Yong-hai Chen;Wei-feng Zhang;Henan Key Laboratory of Photovoltaic Materials, Henan University;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences;Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute;

【通讯作者】陈涌海;张伟风;

【机构】 Henan Key Laboratory of Photovoltaic Materials, Henan University； Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices； Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences； Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences； Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute；

【摘要】 The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.更多还原

【Abstract】 The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.更多还原

【关键词】 AlGaAs； phonon； Wells； polarized； anisotropic； asymmetry； relaxation； orbit； fitting； repetition；

【基金】 Supported by the National Basic Research Program of China under Grant No 2015CB921503;the National Natural Science Foundation of China under Grant Nos 61474114,11574302,61627822 and 11704032;the National Key Research and Development Program of China under Grant Nos 2018YFA0209103,2016YFB0402303 and 2016YFB0400101

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2019年07期

【分类号】O471.1
【下载频次】24

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