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Growth of TlBa2Ca2Cu3O9 Epitaxial Thin Films by Two-Step Method in Argon

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【作者】 邢建王荔田高晓欣梁雪连何楷泳薛婷赵生辉张金利何明赵新杰阎少林王培季鲁

【Author】 Jian Xing;Li-Tian Wang;Xiao-Xin Gao;Xue-Lian Liang;Kai-Yong He;Ting Xue;Sheng-Hui Zhao;Jin-Li Zhang;Ming He;Xin-Jie Zhao;Shao-Lin Yan;Pei Wang;Lu Ji;College of Electronic Information and Optical Engineering, Nankai University;Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin;Beijing Institute of Radio Measurement;

【通讯作者】 季鲁;

【机构】 College of Electronic Information and Optical Engineering, Nankai UniversityTianjin Key Laboratory of Optoelectronic Sensor and Sensing Network TechnologyKey Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinBeijing Institute of Radio Measurement

【摘要】 TlBa2 Ca2 Cu3 O9(Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO3(001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100℃ compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone,from 790℃ to 830℃. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current Jc(77 K, 0 T) is up to 2.13 × 106 A/cm2.

【Abstract】 TlBa2 Ca2 Cu3 O9(Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO3(001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100℃ compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone,from 790℃ to 830℃. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current Jc(77 K, 0 T) is up to 2.13 × 106 A/cm2.

【关键词】 annealingsputteringdenseArgonfabricatepinningargonchallengeYBCOannealed
【基金】 Supported by the National Natural Science Foundation of China under Grant No 51002081;the Fundamental Research Funds for the Central Universities of China;the Research Program of Application Foundation and Advanced Technology of Tianjin under Grant No 15JCQNJC01300
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2019年05期
  • 【分类号】O484
  • 【下载频次】32
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