【摘要】 GaN二极管的串联电阻和零偏压电容是其非线性模型部分的两项关键参数,其提取一般基于直流I-V和低频的C-V方法。然而,在诸多应用中,二极管的工作频率一般会达到数个GHz。为了验证提取的参数在高频时的准确性,本论文使用了两种方法,分别基于时域波形和频域S参数在其工作频率对其模型参数进行验证。更多还原

【Abstract】 The series resistance and the junction capacitance at zero bias voltage are two critical parameters for GaN diodes. The extraction of them are usually based on DC I-V and low frequency C-V tests. However, for a large amount of applications, the diodes are normally used at GHz frequencies. In order to verify the validity of these extracted parameters at higher frequencies, two methodsareadopted, and the parameters can be verified via the time-domain waveform as well as the frequency domain S-parametersdirectly atits designed working frequencies.更多还原