【摘要】 为提高二极管雪崩击穿电流耐量,从斜角终端入手进行分析研究,利用Silvaco TCAD仿真软件对正、负斜角终端P+PNN+结构二极管雪崩击穿电流的分布进行了仿真分析。仿真结果表明,当发生雪崩击穿时,正斜角结构二极管的雪崩击穿电流集中在体内,负斜角结构二极管的则主要发生在边缘处,从而证明正斜角终端更有利于提高二极管的雪崩电流耐量。实验结果中正斜角结构的雪崩电流值明显大于负斜角结构的数值,测试结果与仿真分析的预测一致,说明将负斜角改为正斜角是提高二极管雪崩电流耐量的有效技术措施。更多还原

【Abstract】 In order to improve the avalanche breakdown current tolerance of the diode, the analysis and research are carried out from the bevel terminal. The distribution of avalanche breakdown current of the diode with positive and negative angle terminals P+PNN+is simulated and analyzed by using Silvaco TCAD simulation software. The simulation results show that when avalanche breakdown occurs, the avalanche breakdown current of the diode with positive angle structure is concentrated in the body, while that of the diode with negative angle structure mainly occurs at the edge, thus proving that the positive angle terminal is more conducive to improving the avalanche current tolerance of the diode. The experimental results show that the avalanche current value of the positive bevel angle structure is obviously larger than that of the negative bevel angle structure, and the test results are consistent with the predictions of simulation analysis, indicating that changing the negative bevel angle to the positive bevel angle is an effective technical measure to improve the tolerance of diode avalanche current.更多还原