【摘要】 采用分子束外延法成功制备出非理想因子近似为1的台面型SiGe HBT,测量了正常尺寸和大尺寸两种晶体管的Gummel曲线和交流曲线,并测出其截止频率。运用物理公式变换法对Gummel图进行参数提取,包括非理想因子,集电极和基极串联电阻,集电极和基极反向饱和电流等,其中基极反向饱和电流包括扩散项和复合项两部分。将参数提取结果与资料上的理论值进行了比较,结果基本一致,验证了提参结果的正确性,同时发现扩散电流项与面积成正比,而复合电流项与周长成正比。比较了不同尺寸SiGe HBT的参数提取技术,对大尺寸器件提取出IBO1和I B’O 1两个值,并给出了现象的相关解释。更多还原

【Abstract】 The mesa-type SiGe HBT with approximately unity non-ideal factors is fabricated successfully by molecular beam epitaxy, the Gummel plot and AC plot of two transistors with normal size and large size were measured, and the cut-off frequency was measured. The parameters of Gummel plot are extracted by using physics formula transformation method, including non-ideal factor, series resistance of collector and base, reverse saturation current of collector and base, etc. The reverse saturation current of base includes diffusion term and recombination term. The results of parameter extraction are compared with the theoretical values on the data. The results are basically consistent, which verifies the correctness of the results of parameter extraction. At the same time, it is found that the diffusion current term is directly proportional to the area, while the recombination current term is directly proportional to the circumference.The parameter extraction techniques of SiGe HBT with different sizes are compared. IBO1 and IB ’O’1 are extracted from large-sized devices, and the related explanation of the phenomenon is given.更多还原