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A Novel RRAM Based PUF for Anti-Machine Learning Attack and High Reliability

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【作者】 戴澜闫强强易盛禹刘文楷钱鹤

【Author】 DAI Lan;YAN Qiangqiang;YI Shengyu;LIU Wenkai;QIAN He;Academy of Electronic Information Engineering, North China University of Technology;Institute of Microelectronics, Tsinghua University;

【通讯作者】 戴澜;

【机构】 Academy of Electronic Information Engineering, North China University of TechnologyInstitute of Microelectronics, Tsinghua University

【摘要】 Due to the unique response mechanism, physical unclonable function(PUF) has been extensively studied as a hardware security primitive. And compared to other PUFs, the resistive random access memory(RRAM)based PUF has more flexibility with the change of conductive filaments. In this work, we propose an exclusive or(XOR) strong PUF based on the 1 Kbit 1-transistor-1-resistor(1 T1 R) arrays, and unlike the traditional RRAM based strong PUF, the XOR PUF has a stronger anti-machine learning attack ability in our experiments. The reliability of XOR RRAM PUF is determined by the read instability, thermal dependence of RRAM resistance,and aging. We used a split current distribution scheme to make the reliability of XOR PUF significantly improved.After baking for 50 h at a high temperature of 150?C, the intra-chip Hamming distance(Intra-HD) only increased from 0 to 4.5%. The inter-chip Hamming distance(Inter-HD) and uniformity are close to 50%(ideally). And it is proven through the NIST test that XOR PUF has a high uniqueness.

【Abstract】 Due to the unique response mechanism, physical unclonable function(PUF) has been extensively studied as a hardware security primitive. And compared to other PUFs, the resistive random access memory(RRAM)based PUF has more flexibility with the change of conductive filaments. In this work, we propose an exclusive or(XOR) strong PUF based on the 1 Kbit 1-transistor-1-resistor(1 T1 R) arrays, and unlike the traditional RRAM based strong PUF, the XOR PUF has a stronger anti-machine learning attack ability in our experiments. The reliability of XOR RRAM PUF is determined by the read instability, thermal dependence of RRAM resistance,and aging. We used a split current distribution scheme to make the reliability of XOR PUF significantly improved.After baking for 50 h at a high temperature of 150?C, the intra-chip Hamming distance(Intra-HD) only increased from 0 to 4.5%. The inter-chip Hamming distance(Inter-HD) and uniformity are close to 50%(ideally). And it is proven through the NIST test that XOR PUF has a high uniqueness.

【基金】 the Special Research Fund for the National Science Foundation of China(Nos.61674087 and61674092);the Foundation of Beijing Innovation Center for Future Chip(No.KYJJ2016007)
  • 【文献出处】 Journal of Shanghai Jiaotong University(Science) ,上海交通大学学报(英文版) , 编辑部邮箱 ,2019年01期
  • 【分类号】TP333;TP309
  • 【下载频次】128
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