【摘要】 氧化亚铜在光伏及光催化等领域有潜在应用,掺氮能增加其空穴浓度从而提高电导率,但氮在氧化亚铜的状态仍未被深入研究.在溅射压强等参数不变的条件下,逐步增加氮气流量,制备了一系列纯相的氮掺杂的氧化亚铜,并用X射线衍射、台阶仪、扫描电子显微镜、能量色散谱仪、拉曼光谱、X射线光电子能谱仪、霍尔效应及分光光度计等方法对所得样品进行分析.霍尔效应测试结果表明,氮掺杂能使氧化亚铜薄膜空穴浓度提高1个数量级.禁带宽度随氮气流量的增加而逐渐减小,氮在氧化亚铜中以β-N(氮原子)、α-N2(分子态氮,—N■N—)及γ-N2(分子态氮,N≡N)3种形式存在,随着氮流量的增加,β-N的结合能的峰强不断增强,而α-N2的结合能的峰强不断减弱.氮流量为2标准立方厘米每分钟(sccm)时所得样品的电阻率最小.更多还原

【Abstract】 Cuprous oxide（ Cu₂O） has the potential applications in photovoltaic and photocatalytic fields. Nitrogendoping in Cu₂O can improve the conductivity by increasing hole concentration. However,the chemical states of nitrogen in nitrogen-doped Cu₂O have not been studied thoroughly. A series of nitrogen-doped Cu₂O samples are prepared by increasing nitrogen flow rates and simultaneously keeping the sputtering pressure and other parameters unchanged. The samples are characterized by X-ray diffraction（ XRD）,step instrument,scanning electron microscope（ SEM）,energy dispersive spectrometer,Raman spectroscopy,X-ray photoelectron spectroscopy（ XPS）,spectrophotometer and Hall effect et al. The results of Hall effect measurement show that nitrogen-doping can increase the hole concentration by one order of magnitude. The band gap width decreases with the increase of nitrogen flow rate. The nitrogen in Cu₂O is in three forms: β-N（ nitrogen atom）,α-N2（ molecular nitrogen,—N■N—） andγ-N2（ molecular nitrogen,N≡N）. With the increase of nitrogen gas flow rate,the peak of binding energy of β-N increases while that of α-N2 decreases. The sample prepared at the nitrogen flow rate of 2. 0 sccm has the minimum resistivity among all samples.更多还原