【摘要】 锐钛矿TiO₂为一种常见的n型半导体材料,在光催化、电池光阳极电极、生物材料等领域具有应用前景。离子镀方法具有沉积速率快、膜-基结合力好、薄膜结构致密等优点,被广泛应用于各类涂层制备中。在制备过程中,不同Ar/O₂比与烧结温度对涂层相结构与结晶程度有很大的影响,利用多弧离子镀膜机进行不同Ar/O₂比与烧结温度正交实验。结合X射线衍射（XRD）图谱可知,Ar/O₂比可以直接决定涂层的相结构,而烧结温度能决定涂层结晶程度。对Ar/O₂比为1∶2,烧结温度为550℃的薄膜进行扫描电镜表征可知涂层为典型的柱状生长模式,表面存在未被氧化的Ti颗粒。更多还原

【Abstract】 Anatase TiO₂ is a common n-type semi-conductor and has application prospect in photocatalysis, photoanode, and biomaterial. The ion plating method has advantages of high deposition rate, good film-based bonding force, and dense film structure, so it is widely used in various coating preparations. Different Ar/O2 radio and sintering temperature in preparation process have prodigious influence in phase structure and crystallinity, therefor performing orthogonal experiments on different Ar/O₂ ratios and sintering temperatures. Combining with XRD pattern, we can deduce that Ar/O₂ ratio can directly determine the phase structure of the coating and the degree of crystallinity of the coating is determined by sintering temperature. Scanning electron microscopy characterization of the coating with an Ar/O₂ ratio of 1∶2 and sintering temperature of 550 ℃ shows that the coating is a typical columnar growth mode with unoxidized Ti particles on the surface.更多还原