【摘要】 结合真空电子束气相沉积（electron beam evaporation deposition, EBVD）和磁控溅射（magnetron sputtering deposition, MSD）技术,分别在Al₂O₃陶瓷衬底上制备以Cu膜为发射层的单一Cu膜和Mo/Cu复合膜及Mo/Ni/Cu复合膜3种结构阴极薄膜。基于二极管场发射器件结构,研究了各样品的场发射特性。利用场发射扫描电子显微镜（field emission scanning electron microscopy, FE-SEM）和能谱仪（energy dispersive spectrometry, EDS）对样品表面形貌和成分进行分析。结果表明:Mo/Ni/Cu复合膜的阈值电场为3.3 V·μm^-1;最大电流密度为63.0μA·cm^-2;比在相同条件下制备的单一Cu膜和Mo/Cu复合膜具有更好的场发射特性,表明金属复合膜结构有效的改善了单一Cu膜的场发射性能。更多还原

【Abstract】 Combined with the vacuum electron beam vapor deposition（EBVD） and magnetron sputtering deposition（MSD） techniques, three kinds of cathode films, single Cu film, Mo/Cu composite film and Mo/Ni/Cu composite film, were prepared on alumina（Al₂O₃） ceramic substrates by taking Cu film as the emitting layer. Based on the structure of diode field emission device, the field emission characteristics of each sample were studied. Field emission scanning electron microscopy（FE-SEM）and energy dispersive spectroscopy（EDS） were used to analyze the surface morphology and composition of the samples. The results show that the threshold electric field of Mo/Ni/Cu composite structure is 3.3 V·μm^-1, the maximum current density is 63.0 μA·cm^-2. Compared with the single Cu film and the Mo/Cu composite film prepared under the same conditions, the Mo/Ni/Cu composite film show better field emission characteristics, indicating that the metal composite film structure effectively improves the field emission performance of the single Cu film.更多还原