【摘要】 介绍了相变存储材料的工作原理与其工作性能之间的对应关系,相变存储材料的开发与材料性能要求密不可分,在分析当前主流相变存储材料Ge₂Sb₂Te₅的优点与不足的基础上,指出无Te富Sb为未来相变存储材料体系的研究方向。控制相变行为是实现相变存储技术商业化的关键,材料的微观结构和相变机制决定了相变存储材料的相变行为,而计算材料学是研究相变存储材料微观结构与相变机制之间联系的必要手段。运用第一性原理动态模拟相变存储材料的相变过程,可以弥补静态结构分析的不足,推动对快速可逆相变机理动态过程的理解运用,同时为进一步研究相变存储材料提供借鉴。更多还原

【Abstract】 The correspondence between the working principle of phase change memory materials and their working performance is introduced. The development of materials is closely related to the properties of materials. Based on the analysis of the advantages and disadvantages of Ge₂Sb₂Te₅,it is pointed out that Te-free Sb-rich is the future research direction. Phase change behavior is the key factor of phase change memory technology,which is determined by the microstructure and phase transition mechanism of the materials. And computational materials science is a necessary means to study the relationship between microstructure and phase change mechanism of materials. The first principle can dynamically simulate the phase change process of materials,which can make up for the deficiency of static structure analysis,promote the understanding and application of the dynamic process of rapid reversible phase change mechanism and provide reference for the further study of phase change memory materials.更多还原